| 1. Identity statement | |
| Reference Type | Journal Article |
| Site | plutao.sid.inpe.br |
| Holder Code | isadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S |
| Identifier | J8LNKAN8RW/38JE6T2 |
| Repository | dpi.inpe.br/plutao/2010/11.11.16.12.54 (restricted access) |
| Last Update | 2011:02.22.17.43.11 (UTC) marciana |
| Metadata Repository | dpi.inpe.br/plutao/2010/11.11.16.12.55 |
| Metadata Last Update | 2024:05.17.11.17.15 (UTC) marciana |
| Secondary Key | INPE--PRE/ |
| DOI | 10.1016/j.jcrysgro.2010.06.022 |
| ISSN | 0022-0248 |
| Label | lattes: 3801575713681461 3 DíazMaRaAbChHe:2010:GrEuIs |
| Citation Key | DíazMaRaAbChHe:2010:GrEuIs |
| Title | Growth of EuTe islands on SnTe by molecular beam epitaxy  |
| Year | 2010 |
| Month | Set. |
| Access Date | 2024, May 18 |
| Secondary Type | PRE PI |
| Number of Files | 1 |
| Size | 880 KiB |
| 2. Context | |
| Author | 1 Díaz, Beatriz 2 Malachias, A 3 Rappl, Paulo Henrique de Oliveira 4 Abramof, Eduardo 5 Chitta, V. A. 6 Henriques, A. B. |
| Resume Identifier | 1 2 3 8JMKD3MGP5W/3C9JJ37 |
| Group | 1 LAS-CTE-INPE-MCT-BR 2 3 LAS-CTE-INPE-MCT-BR 4 LAS-CTE-INPE-MCT-BR |
| Affiliation | 1 Instituto Nacional de Pesquisas Espaciais (INPE) 2 Laboratrio Nacional de Luz Sncrotron, Postal Box 6192, Campinas, 13083-970 SP, Brazil 3 Instituto Nacional de Pesquisas Espaciais (INPE) 4 Instituto Nacional de Pesquisas Espaciais (INPE) 5 Instituto de Fsica, Universidade de so Paulo, Postal Box 66318, So Paulo, 05315-970 SP, Brazil 6 Instituto de Fsica, Universidade de so Paulo, Postal Box 66318, So Paulo, 05315-970 SP, Brazil |
| Author e-Mail Address | 1 2 3 rappl@las.inpe.br |
| e-Mail Address | rappl@las.inpe.br |
| Journal | Journal of Crystal Growth |
| Volume | 312 |
| Number | 19 |
| Pages | 2828-2833 |
| Secondary Mark | B2_ASTRONOMIA_/_FÍSICA B1_ENGENHARIAS_II A2_ENGENHARIAS_III B1_ENGENHARIAS_IV A2_INTERDISCIPLINAR B1_MATERIAIS B1_ODONTOLOGIA B2_QUÍMICA |
| History (UTC) | 2010-12-06 14:15:17 :: lattes -> ricardo :: 2010 2010-12-07 11:40:30 :: ricardo -> marciana :: 2010 2011-02-22 17:43:11 :: marciana -> administrator :: 2010 2018-06-05 00:12:17 :: administrator -> marciana :: 2010 |
| 3. Content and structure | |
| Is the master or a copy? | is the master |
| Content Stage | completed |
| Transferable | 1 |
| Content Type | External Contribution |
| Version Type | publisher |
| Keywords | Semiconductor growth - Aspect ratio - Atomic force microscopy - Atoms - Crystal structure - Electron diffraction - Epitaxial growth - High energy physics - Lattice mismatch - Magnetic moments - Molecular beam epitaxy - Molecular beams - Reflection - Reflection high energy electron diffraction - Semiconductor quantum dots - Sodium chloride - X ray diffraction - X rays |
| Abstract | Semiconductor magnetic quantum dots are very promising structures, with novel properties that find multiple applications in spintronic devices. EuTe is a wide gap semiconductor with NaCl structure, and strong magnetic moments S=7/2 at the half filled 4f7 electronic levels. On the other hand, SnTe is a narrow gap semiconductor with the same crystal structure and 4% lattice mismatch with EuTe. In this work, we investigate the molecular beam epitaxial growth of EuTe on SnTe after the critical thickness for island formation is surpassed, as a previous step to the growth of organized magnetic quantum dots. The topology and strain state of EuTe islands were studied as a function of growth temperature and EuTe nominal layer thickness. Reflection high energy electron diffraction (RHEED) was used in-situ to monitor surface morphology and strain state. RHEED results were complemented and enriched with atomic force microscopy and grazing incidence X-ray diffraction measurements made at the XRD2 beamline of the Brazilian Synchrotron. EuTe islands of increasing height and diameter are obtained when the EuTe nominal thickness increases, with higher aspect ratio for the islands grown at lower temperatures. As the islands grow, a relaxation toward the EuTe bulk lattice parameter was observed. The relaxation process was partially reverted by the growth of the SnTe cap layer, vital to protect the EuTe islands from oxidation. A simple model is outlined to describe the distortions caused by the EuTe islands on the SnTe buffer and cap layers. The SnTe cap layers formed interesting plateau structures with easily controlled wall height, that could find applications as a template for future nanostructures growth. |
| Area | FISMAT |
| Arrangement | urlib.net > BDMCI > Fonds > Produção anterior à 2021 > LABAS > Growth of EuTe... |
| doc Directory Content | access |
| source Directory Content | there are no files |
| agreement Directory Content | there are no files |
| 4. Conditions of access and use | |
| Language | en |
| Target File | dias.pdf |
| User Group | administrator lattes marciana |
| Reader Group | administrator marciana |
| Visibility | shown |
| Archiving Policy | denypublisher denyfinaldraft24 |
| Read Permission | deny from all and allow from 150.163 |
| Update Permission | not transferred |
| 5. Allied materials | |
| Next Higher Units | 8JMKD3MGPCW/3ESR3H2 |
| Dissemination | WEBSCI; PORTALCAPES. |
| Host Collection | dpi.inpe.br/plutao@80/2008/08.19.15.01 |
| 6. Notes | |
| Notes | Setores de Atividade: Pesquisa e desenvolvimento científico. |
| Empty Fields | alternatejournal archivist callnumber copyholder copyright creatorhistory descriptionlevel format isbn lineage mark mirrorrepository nextedition orcid parameterlist parentrepositories previousedition previouslowerunit progress project rightsholder schedulinginformation secondarydate session shorttitle sponsor subject tertiarymark tertiarytype typeofwork url |
| 7. Description control | |
| e-Mail (login) | marciana |
| update | |